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埋氧层固定界面电荷对RESURF SOI功率器件击穿特性的影响 被引量：3

Effects of Fixed Interface Charges in Buried-Oxide on the Breakdown Characteristics of RESURF SOI Power Devices
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摘要 　通过求解具有界面电荷边界条件的二维泊松方程,建立了埋氧层固定界面电荷Qf对RESURFSOI功率器件二维电场和电势分布影响的解析模型。解析结果与半导体器件模拟器MEDICI数值分析结果相吻合。在此基础上,分别研究了Qf对RESURFSOI功率器件横向和纵向击穿特性的影响规律。在横向,讨论了不同硅膜厚度、氧层厚度和漂移区长度情况下Qf对表面电场分布的影响;在纵向,通过分析硅膜内的场和势的分布,提出了临界埋氧层固定界面电荷密度的概念,这是导致器件发生失效的最低界面电荷密度。 Based on the solution of 2-D Poisson equation, an analytical model for effects of fixed interface charges,Q_f, in buried-oxide on surface field and potential distribution of RESURF SOI power devices is proposed. Analytical results are shown in good agreement with the numerical analysis obtained with MEDICI. The influences of Q_f on lateral breakdown voltage are the function of structure parameters including silicon film thickness, buried oxide thickness and drift region length. The critical density of fixed interface charges is present for the influences of Q_f on vertical breakdown voltage.
作者 郭宇锋 李琦 罗小蓉 杨寿国 李肇基 张波
机构地区 电子科技大学IC设计中心
出处 《微电子学》 CAS CSCD 北大核心 2004年第2期181-184,共4页 Microelectronics
基金 模拟集成电路国家重点实验室基金资助项目(51439020103DZ0201)
关键词 埋氧层 固定界面电荷 RESURF SOI 功率器件 击穿 RESURF SOI Power device Fixed interface charge
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献5

  • 1[1]Chen H-S. A model of analyzing the interface properties of a semiconductor-insulator-semiconductor structure-I: capacitance and conductance techniques[J]. IEEE Trans Elec Dev, 1992; 39(7): 1740.
  • 2[2]Koga J, Takagi S, Yoriumi A. Influences of buriedoxide interface on inversion-layer mobility in ultrathin SOI MOSFETs [J]. IEEE Trans Elec Dev,2002; 49(6): 1042.
  • 3[3]Wang H M, Chan M S, Wang Y Y, et al. The behavior of narrow-width SOI MOSFET's with MESA isolation [J]. IEEE Trans Elec Dev, 2000; 47 (3) :593.
  • 4[4]Sadana D K, Hovel H J. Effect of the back gate conduction on 0. 25μm SOI devices [A]. IEEE Elec Dev Meeting [C]. 1994. 653.
  • 5[5]Lawrence R K, Mrstik B J, Hughes H L, et al. Positive charge trapping in SOI materials [A]. Proc 1996 IEEE Int SOI Conf [C]. 1996. 34

同被引文献41

  • 1郭宇锋,刘勇,李肇基,张波,方健,刘全旺,张剑.阶梯掺杂漂移区SOI高压器件浓度分布优化模型[J].微电子学,2005,35(3):256-259. 被引量：2
  • 2MERCHANT S,ARNOLD E,BAUMGART H,et al.Realization of high breakdown voltage (》700 V) in thin SOI device[C] // Proc IEEE Int Symp Power Semicond Dev and IC's.Baltimore,MD,USA.1991:31-35.
  • 3NAKAGAWA A,YASUHARA N,BABA Y.Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film[J].IEEE Trans Elec Dev,1991,38(7):1650-1654.
  • 4FUNAKI H,YAMAGUCHI Y,HIRAYAMA K,et al.New 1200 V MOSFET structure on SOI with SIPOS shielding layer[C] // Proc IEEE Int Symp Power Semicond Dev and IC's.Tokyo,Japan.1998:25-28.
  • 5KAPELS H,PLIKAT R,SILBER D.Dielectric charge traps:a new structure element for power devices[C] // Proc IEEE Int Symp Power Semicond Dev and IC's.Toulouse,France.2000:205-208.
  • 6LI Zhaoji,LUO Xiaorong,ZHANG Bo,et al.The enhancement of dielectric layer field of SOI high voltage devices[C] // Fouth Joint Symp Opto-and Microelec Dev and Circ.Duisburg,Germany.2006:61-64.
  • 7ZHANG Bo,LI Zhaoji,HU Shengdong,et al.Field enhancement for dielectric layer of high-voltage devices on silicon on insulator[J].IEEE Trans Elec Dev,2009,56(10):2327-2334.
  • 8LUO Xiaorong,ZHANG Bo,LI Zhaoji.A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer[J].Sol Sta Elec,2007,51(5):493-499.
  • 9LUO Xiaorong,LI Zhaoji,ZHANG Bo,et al.Realization of high voltage (》 700 V) in new SOI devices with a compound buried layer[J].IEEE Elec Dev Lett,2008,29(12):1395-1397.
  • 10LUO Xiaorong,ZHANG Bo,LI Zhaoji,et al.A novel 700-V SOI LDMOS with double-side trench[J].IEEE Elec Dev Lett,2007,28 (5):422-424.

引证文献3

二级引证文献3

微电子学
2004年 第2期

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