摘要
通过求解具有界面电荷边界条件的二维泊松方程,建立了埋氧层固定界面电荷Qf对RESURFSOI功率器件二维电场和电势分布影响的解析模型。解析结果与半导体器件模拟器MEDICI数值分析结果相吻合。在此基础上,分别研究了Qf对RESURFSOI功率器件横向和纵向击穿特性的影响规律。在横向,讨论了不同硅膜厚度、氧层厚度和漂移区长度情况下Qf对表面电场分布的影响;在纵向,通过分析硅膜内的场和势的分布,提出了临界埋氧层固定界面电荷密度的概念,这是导致器件发生失效的最低界面电荷密度。
Based on the solution of 2-D Poisson equation, an analytical model for effects of fixed interface charges,Q_f, in buried-oxide on surface field and potential distribution of RESURF SOI power devices is proposed. Analytical results are shown in good agreement with the numerical analysis obtained with MEDICI. The influences of Q_f on lateral breakdown voltage are the function of structure parameters including silicon film thickness, buried oxide thickness and drift region length. The critical density of fixed interface charges is present for the influences of Q_f on vertical breakdown voltage.
出处
《微电子学》
CAS
CSCD
北大核心
2004年第2期181-184,共4页
Microelectronics
基金
模拟集成电路国家重点实验室基金资助项目(51439020103DZ0201)