摘要
本文叙述了激光干涉弯曲晶片薄膜应力测定法的原理。依据这一原理建立了薄膜应力分析系统,并实际分析了作为X射线掩模基膜的Si_3N_4膜中的应力。用Stoney公式计算出Si_3N_4膜的内应力为6.4×10~8dyn/cm^2。
The principle of Laser interference-bent wafer technique for the determinaion of stress in thin films is reviewed in this paper. According to this principle, a system for the analyses of stress in thin films is established. An analysis is conducted of the stress in Si_3N_4 films used as an X-ray mask membrane material. By Stoney formula, stress in Si_3N_4 film is calculated, the result being 6.4×10~8dyn/cm^2.
关键词
薄膜
内应力
激光干涉
弯曲晶片法
stress in thin films, Laser interference, bent wafer, X-ray mask
