可见光波段发光多孔硅膜的结构特征研究

Structure Characteristic of Porous Silicon Films With Visible Photoluminescence

采用在HF溶液中阳极处理硅单晶片的方法制备了具有可见光波段发光特性的多孔硅膜。应用X光衍射技术及激光喇曼散射谱研究了发光多孔硅膜的结构特征。研究结果表明:纳米量级尺寸是多孔硅膜的一个重要特征。估计多孔硅硅柱横截面直径在几到十几纳米之间。

The Porous silicon films producing visible photoluminescence are prepared by anodization of ptype single-crystal Si wafers in hydrofluoric acid solution. The structural characteristic of these porous silicon films are studied by X-ray diffraction technoligy and Laser Raman scattering measurement. It is shown that the quantum dimension with nanometer order size is an important structural characteristic of porous silicon films.