摘要
利用射频磁控溅射方法,真空室中充入高纯N2(99.99%)和高纯Ar(99.99%)的混合气体,在n型(100)Si基底上沉积了六角氮化硼(h-BN)薄膜.在超高真空(<10-7Pa)系统中测量了BN薄膜的场发射特性,发现沉积时基底温度对BN薄膜的场发射特性有很大影响.基底温度为500℃时沉积的BN薄膜样品场发射特性要好于其他薄膜,阈值电场为12V/μm,电场升到34V/μm,场发射电流为280μA/cm2.所有样品的Fowler-Nordheim(F-N)曲线均近似为直线,表明电子是通过隧道效应穿透BN薄膜发射到真空的.
H-BN thin films were prepared on the (100)-oriented surface of n-Si by r.f. sputtering physical vapor deposition(PVD). The field emission characteristics of the BN films were measured in a ultra high vacuum system. It has been found that the field emission characteristics of BN films is affected evidently by substrates temperature. A turn-on electric field as low as 12 V/μm is obtained and the highest emission current density is 280 μA/cm^2 for the BN film deposited at a substrate temperature of 500 ℃. The Fowler-Nordheim(F-N) curves are all nearly straight lines that indicate the electrons are emitted from n-Si to penetrate the BN films to vacuum tunneling by means of tunneling effect.
出处
《吉林大学学报（理学版）》
CAS
CSCD
北大核心
2004年第2期251-254,共4页
Journal of Jilin University:Science Edition
基金
国家自然科学基金(批准号:59831040).
