16厘米低能强流宽束离子源

16 cm diameter low energy broad beam ion source

介绍了一个新型16厘米束径多会切磁场低能强流宽束离子源(MCLB-16)。由于采用新型多会切磁场和优化的低能引出系统,所以该源在薄膜辅助沉积的能量(200eV～800eV)范围内,具有较好的低能特性。源的最大引出束流可达650mA。可用反应气体或惰性气体工作。源在使用氧气时,可连续工作数十小时。该源可用于各种高性能薄膜制备的辅助沉积,也可用于制备大面积类金钢石膜(DLC)。叙述了该源的结构及性能。

This paper describes a 16 cm diameter multicusp low energy broad beam ion source. The source has good performance in the low energy region. It can extract beam current 200 mA at beam energy as low as 200 eV. The maximum extractable beam current is up to 650 mA at beam energy 800eV. The inert and reactive gases are compatible and can run for several ten hours for Oxygen, continuously. So the source is well suitable for the optical thin film assisted deposition to prepare the high quality films. The structure and performance of this ion source will be presented in this paper.