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SBN60铁电薄膜横向电光系数及M-Z波导半波电压的研究

Measurement of electro-optic coefficients in SBN60 and their applications in M-Z type waveguide modulators
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摘要 主要介绍MgO衬底上掺K和不掺K的SBN60铁电薄膜的横向电光系数r51的测量,并由此设计一种MgO衬底上M-Z型薄膜波导调制器,并计算出此种波导调制器的半波调制电压,实验说明掺入K离子能减少其半波调制电压。 High-quality z-axis oriented SBN60 thin films on MgO(001) substrates have been grown by sol-gel process, The transverse electro-optic coefficients r_(51) of the SBN60 and potassium ion doped SBN60 thin films were measured respectively. M-Z type waveguide modulators made of SBN60 thin films were designed. The half-wave modulation voltage was demonstrated to be decreased with the K ion doping.
作者 沈智如 叶辉 沈伟东 曹晓燕 郭冰 邹桐
机构地区 浙江大学现代光学仪器国家重点实验室
出处 《光学仪器》 2004年第2期156-160,共5页 Optical Instruments
基金 浙江省自然科学基金资助项目(500077)。
关键词 铁电薄膜 横向电光系数 半波调制电压 M-Z型薄膜波导调制器 transverse electro-optic coefficient M-Z type modulator half-wave modulation voltage
分类号 O484.4 [理学—固体物理]
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参考文献6

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二级参考文献11

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光学仪器
2004年 第2期

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