摘要
介绍了国际上近年来碳化硅薄膜的研究情况 ,碳化硅外延生长大多采用溅射法 (sputting)、化学气相淀积 (CVD)和分子束外延 (MBE) .对生长工艺对碳化硅薄膜特性的影响进行了对比研究 .
As a kind of new Semi Conductor material,silicon carbide exihibits several outstanding properties.The current status of SiC films is summarized.Methods of synthesis of SiC films include sputting,chemical vapor deposition,and molecular beam epitaxy.Influence of experiment condition on SiC films has been intensive investigated.
出处
《山东师范大学学报（自然科学版）》
CAS
2004年第2期37-40,共4页
Journal of Shandong Normal University(Natural Science)
基金
国家自然科学基金资助项目 ( 90 2 0 10 2 5
90 3 0 10 0 2 )
