摘要
等离子增强化学沉积生长的纳米硅薄膜是由纳米级尺寸的晶粒和晶界组成的厚度极薄的薄膜,采用X射线薄膜衍射法即X射线以低掠射角(1°～5°)入射,延长X射线在薄膜中的行程,同时将聚焦光路改为平行光光路,以提高来自薄膜的衍射强度,得到纳米硅薄膜的衍射峰。借此方法,研究了本征膜和掺磷薄膜的硅晶体结构及掺磷浓度对硅晶粒大小和晶格微观畸变的影响。
Si thin film prepared by plasma enhanced chemical vapor deposition ( PECVD ) is characterized by small-thickness and nanocrystallites. As a result, it is hard to obtain the diffracted X-rays from Si thin film by conventional focusing optical method. In this paper, an alternative way is introduced, in which focusing optics is changed to parallel-beam optics and low-angle incidence is achieved by fixing the θ-axis to increase the diffracted X-rays from the Si thin film and remove the contribution of intensity from the substrate. Based on the parallel-beam optical method, the phase analysis, effect of P concentration on crystallite size and lattice strain of nc-Si:H and nc-Si:H(P) thin film are studied.
出处
《理化检验（物理分册）》
CAS
2004年第4期179-182,186,共5页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
