摘要
我们测量了低N组分的InGaAsN/InGaAs/GaAs量子阱材料的光致发光(PL)谱,测量温度范围从13K到300K。实验结果显示,InGaAsN的PL谱的主峰值的能量位置随温度的变化呈现出反常的S型温度依赖关系。用Varshni经验公式对实验数据进行拟合之后,发现在低温下InGaAsN量子阱中的载流子是处于局域态的。此外,我们还测量了样品在不同的温度、不同的能量位置的瞬态谱,结果进一步证实了:在低温下,InGaAsN的PL谱谱峰主要是局域态激子的复合发光占据主导地位,而且InGaAsN中的载流子局域态主要是由N等电子缺陷造成的涨落势引起的。
The photoluminescence (PL) spectroscopy in InGaAsN/InGaAs/GaAs quantum wells (QWs) with low-nitrogen composition has been measured in the temperature range 13-300K. The peak position energies of InGaAsN as measured by PL exhibit anomalous inverted S-shape-like temperature dependence. Fitting with Varshni empirical relation to PL data, we have found that carriers in InGaAsN QWs are localized at low temperatures. Moreover, Time-resolved photoluminescence (TRPL) measurements, performed for various temperatures and different PL energy position, further proved that the broad PL emission of InGaAsN at low temperature is mainly dominated by strong localization, which arises from nitrogen-induced fluctuating potential in quantum wells.
出处
《光散射学报》
2004年第1期70-75,共6页
The Journal of Light Scattering
