高比表面碳化硅的制备与应用

Preparation and application of high specific area silicon carbide

利用碳化硅陶瓷材料耐磨、耐蚀、高热导等优良特性 ,同时攻克其比表面积低的缺陷 ,可使其成为一种催化剂载体的理想候选材料 ,应用于高温、强腐蚀等苛刻反应条件中。归纳了近年来高比表面碳化硅材料的研究进展 ,并阐述了其制备原理、方法及应用。

Silicon carbide is a very ideal candidate for the catalyst support in high temperature and strongly corrosion reactions taking account of its high abrasive resistance, high thermal conductivity and good anticorrosive. It also shows several advantages when compared to the oxidic catalyst supports. But the specific area of the SiC available is too low to be applicable in a chemical reaction and there is rare domestic study on the preparation of high specific area SiC.