期刊文献+

一种新型存储器件—磁电存储器 被引量:2

A New Kind of Memory Device-MARM
下载PDF
导出
摘要 磁电存储器不仅存取速度快、功耗小 ,而且集动态RAM、磁盘存储和高速缓冲存储器功能于一身 ,因而已成为动态存储器研究领域的一个热点。文章总结了磁电存储器的工作原理和特性 ,分析了它们的发展现状及存在的问题 ,并对其应用前景进行了展望。 MRAM not only promises huge enhancement of the speed and power consumption,but also possesses the attributes of the DRAM,disk storage and high speed buffer,so it is the key point in the dynamic random access memory research field. The basic principles and characteristic of the MRAM are summarized in this paper,and the development,the existent problems and the application prospect are described.
作者 黄征 庄弈琪
出处 《国外电子元器件》 2004年第4期59-61,共3页 International Electronic Elements
关键词 存储器件 磁电存储器 磁隧道结 自旋电子管 磁电材料 工作原理 MRAM magnetic tunnel junction spin valve
  • 相关文献

参考文献16

  • 1S Tehrani,J M Slaughter,E Chen,"Progress and Outlook for MRAM Technology",IEEE Trans.on Magnetics,Vol.35,NO.5: 2814-2819,1999.?A
  • 2S Datta,B Das,Appl.Phys.Lett,56,665,1990.?A
  • 3Jo.De.Boeck,Gustaaf,"Magnetoelectronie De vices",IEDM,215-218,1999.?A
  • 4S Tehrani,E Chen,"High Density Nonvolatile Magneto resistive RAM",IEDM,193-196,1996.
  • 5D D Tang,P K Wang,"An IC compatible nonvolatile magnetic RAM",IEDM,997 -999,1995.?A
  • 6C Cowache,B Dieny,"Spin-valve structures with NiO pinning layers",IEEE Trans.on Magnetics,Vol.34,NO.2: 843-845,1998.?A
  • 7J Chmalhorst,H Bruckl,"Temperature stability of Co/Al2O3/Co junctions" J.Appl.Phys,Vol.87,NO.9: 5191-5193,2000.?A
  • 8W J Gallagher,S S P Parkin,Microstructured magnetic tunnel junctions" J.Appl.Phys,Vol.81,NO.8:3741 -3746,1997.?A?A?A
  • 9S.Tehrani,J.M.Slaughter,E.Chen,""Progress and Outlook for MRAM Technology"",IEEE Trans.on Magnetics,Vol.35,NO.5: 2814-2819,1999.
  • 10S.Datta,B.Das,Appl.Phys.Lett,56,665,1990.

同被引文献37

  • 1OVSHINSKY S R.Reversible electrical switching phenomena in disordered structures[J].Physical Review Letters,1968,21(20):1450-1453.
  • 2WONG H S P,RAOUX S,KIM S B,et al.Phase change memory[J].Proceedings of the IEEE,2010,98(12):2201-2227.
  • 3FEINLEIB J,DENEUFVILLE J,MOSS S C,et al.Rapid reversible light-induced crystallization of amorphous semiconductors[J].APL,1971,18(6):254-257.
  • 4NEALE R G,NELSON D L,MOORE G E.Amorphous semiconductors part I:nonvolatile and reprogramable,the read-mostly memory is here[J].Electronics,1970,43(20):56-60.
  • 5MOHAMMAD M G,TERKAWI L,ALBASMAN M.Phase change memory faults[C]//Proceedings of the 19th International Conference on VLSI Design,Held Jointly with 5th International Conference on Embedded Systems and Design.Hyderabad,India,2006:108-112.
  • 6MAIMON J,HUNT K,RODGERS J,et al.Results of radiation effects on a chalcogenide non-volatile memory array[C]//Proceedings of IEEE Aerospace Conference.Big sky,Montana,USA,2004,4:2306-2315.
  • 7MAIMON J,SPALL E,QUINN R,et al.Chalcogenidebased non-volatile memory technology[C]//Proceedings of IEEE Aerospace Conference.Big sky,Montana,USA,2001,5:2289-2294.
  • 8YU B,JU S,SUN X,et al.Indium selenide nanowire phasechange memory[J].Applied Physics Letters,2007,91(13):133119-1-133119-3.
  • 9XIONG F,BAE M H,DAI Y,et al.Self-aligned nanotubenanowire phase change memory[J].Nano Letters,2013,13(2):464-469.
  • 10QI P,JAVEY A,ROLANDI M,et al.Miniature organic transistors with carbon nanotubes as quasi-one-dimensional electrodes[J].Journal of the American Chemical Society,2004,126(38):11774-11775.

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部