高温泄漏电流对反相器直流传输特性的影响

Influences of Leakage-Current on DC Transfers Characteristicof Inverter at High Temperature

在本征CMOS反相器直流传输特性和所提出的离子注入浅结近似理论基础上,研究了N+衬底外延P阱CMOS反相器的源-漏结泄漏电流失配对其高温直流传输特性的影响,提出采用双阱或N阱工艺使PMOSFET的衬底浓度高于NMOSFET的衬底浓度,并适当减小PMOSFET漏区宽度的方法,可以减弱源-漏结泄漏电流失配的影响。

Based on the theory of DC transportation characteristic of intrinsic CMOS inverter and approximation of low junction by ion implantation, the influences of leakage-current-mismatch on DC transportation characteristic of CMOS inverter on epitaxial silicon N+ substrate at high temperature are investigated. As a result, the influences might be reduced by adopting a double tube or N-well process to the substrate doping concentration of PMOSFET much heavier than that of NMOSFET, and properly reducing the drain region width of PMOSFET.