MOCVD生长薄膜材料制作半导体可饱和吸收镜

Saturable Absorption Mirror Grown by MOCVD

下载PDF

导出

摘要介绍了当前国际上流行的用半导体可饱和吸收镜来对固体激光器、光纤激光器和半导体激光器进行被动锁模的方法,阐述了半导体可饱和吸收镜用来作为被动锁模吸收体的原理,并介绍了如何利用金属有机气相淀积(MOCVD)技术生长各种波长激光器所需要的半导体可饱和吸收镜. Passive modelocking of solid-state lasers, fiber lasers and semiconductor lasers with semiconductor saturable absorption mirrors (SESAM) was introduced in this article, which is prevailing in the world. The princile of SESAM as an passive modelocking absorber was stated. How to grow SESAMs for lasers with different wavelengths by MOCVD ( metal organic chemical vapor deposition) equipment was also introduced in detail.

作者王勇刚马骁宇韦欣朱小鹏

机构地区中国科学院半导体研究所

出处《光电子技术与信息》 2004年第2期6-9,共4页 Optoelectronic Technology & Information

关键词金属有机气相淀积半导体可饱和吸收镜锁模 MOCVD semiconductor saturable absorption mirror mode lock

分类号 TN304.055 [电子电信—物理电子学]

引文网络
相关文献

参考文献7

1[1]Keller U, et al. Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers:an AFPSA[J]. Opt Lett, 1992, 17(7): 505～507.
2[2]Kopf D, et al. Diode-pumped 100-fs passivelymode- locked Cr: LiSAF laser with an A-FPSA[J].Opt Left, 1994, 19(24): 2143～2145.
3[3]Robertson A, et al. Prismless diode-pumpedmode-locked femtosecond Cr: LiSAF laser[J]. OptCommun, 1999,163:38～43.
4[4]Spuhler G J, et al. 27 W passively mode-lockedNd: YAG laser[J]. IEEE Pacific Rim Conferenceon Lasers and Electro-Optics, CLEO- TechnicalDigest, 2000.
5[5]Hofer R, Hofer M, Reifder G A. High energy,sub-picosecond pulses from a Nd-doped doubleclad fiber laser[J]. Optics Communications, 1999,169:135～139.
6[6]Endo M, Ghosh G, Tanaka Y. Stable generation of femtosecond tunable pulses using a passively mode-locked fiber laser[J]. SPIE, 1999,3729:298～303.
7[7]Oh J M, Choi H B, Lee D, et al. Efficient tunable fiber ring laser for 1580 nm band with a fiber Bragg grating[A]. Proc of OFC'2001[C], paper WA6, 2001.

1李彦丽.MOCVD的原理与故障分析[J].电子工业专用设备,2014,43(11):36-40. 被引量：1
2589nm黄光激光器[J].光机电信息,2009,26(10):58-58.
3王勇刚,马骁宇,张丙元,陈檬,李港,张志刚.Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In_(0.25)Ga_(0.75)As as Output Coupler[J].Journal of Semiconductors,2004,25(12):1595-1598.
4王勇刚,马骁宇,薛迎红,孙虹,张志刚,王清月.Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror[J].Journal of Semiconductors,2005,26(2):250-253. 被引量：1
5汪玉树,许惠英,蔡志平,黄剑平,刘孙丽,罗正钱,林国平.端面泵浦Nd∶YAG连续输出1052nm波长激光器[J].激光与红外,2006,36(5):348-350.
6孙洪波,李玉东,陈松岩,胡礼中,刘式墉.半绝缘InP（Fe）的低温氯化物VPE生长[J].高技术通讯,1995,5(11):41-44.
7515nm半导体泵浦固体激光器[J].光机电信息,2009,26(3):69-69.
8515nm半导体泵浦固体激光器[J].光机电信息,2009,26(1):64-64.
9515nm半导体泵浦固体激光器[J].光机电信息,2009,26(2):59-59.
10515nm半导体泵浦固体激光器[J].光机电信息,2009,26(4):67-67.

光电子技术与信息

2004年第2期

浏览历史

内容加载中请稍等...

MOCVD生长薄膜材料制作半导体可饱和吸收镜

参考文献7

相关作者

相关机构

相关主题

浏览历史