摘要
应用原子层外延与分子层外延的理论研究了Turbo DiskMOCVD外延生长过程 ,发现生长主要发生在衬底表面的台阶处 ,当通过控制生长参数达到优质外延时 ,实际上是一种亚原子外延过程 。
The atomic layer epitaxy theory and molecule layer epitaxy theory were applied to research the Turbo-Disk MOCVD epitaxy process. It was found the growth mainly happened at the sidestep of the surface. When the epitaxy was optimized through the control of growth parameter, the sub- atomic layer epitaxy was realized. And perfect epitaxy layer was obtained through the analysis and control of the system.
出处
《液晶与显示》
CAS
CSCD
2004年第2期128-133,共6页
Chinese Journal of Liquid Crystals and Displays
基金
国家科技攻关计划资助项目 (No.0 0 0 68)
国家"973"资助项目 ( 0 0 1CB3 0 93 0 2 )
广东省重大科技专项资助项目 (No .2 0 0 3A10 3 0 40 5 )
