摘要
报道了采用NO直接氧化制备氮化氧化物作为绝缘层制备高性能Si基MOS肖特基二极管式气体传感器(SDS)的技术。实验结果显示,MOS肖特基二极管式气体传感器具有高的响应灵敏度和好的响应重复性,可以探测浓度约为10-6的氢气。因此,采用NO直接氧化法制备绝缘层是一种制备高可靠、高灵敏度Si基MOSSDS的技术。
Fabrication of high performance platinum/Oxynitride/silicon (MOS) Schottky diode is presented. Direct oxidation in NO gas is successfully applied for the insulator. The interface properties of device have been improved due to nitrogen incorporation in the insulator. A rapid and stable response upon the introduction and removal of H_2/N_2 mixed gas can be realized for the sensor. It has excellent response characteristics and high recoveries. And Tens-ppm of hydrogen can be detected. So direct oxidation in NO gas for insulator is an effect technology to fabricate high reliability and high sensitivity MOS Schottky diode hydrogen gas sensor.
出处
《压电与声光》
CAS
CSCD
北大核心
2004年第2期106-108,共3页
Piezoelectrics & Acoustooptics
基金
湖北自然科学基金资助项目(2000J158)
