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碳纳米管场发射显示器特性测试方法的研讨 被引量：1

Survey on Measurement for Carbon Nanotubes-Field Emission Display
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摘要 通过低压化学气相沉积法在硅片上制作碳纳米管薄膜阴极,用真空荧光显示器的封装工艺,制备了碳纳米管场发射显示器样管。改变常用的驱动电源电压测试为器件电压测试,得到非常理想的伏安特性曲线和发光特性曲线。从测试结果分析可知,直接测量碳纳米管场发射显示器的器件电压和测试电源驱动电压所得结果是不同的,用后者代替前者不够合理。从电子场发射的角度看,实际的碳纳米管场发射伏安特性曲线应比测试的伏安曲线更陡。 No abstract available
作者 田昌会 朱长纯 史永胜 王小力
机构地区 西安交通大学电子与信息工程学院
出处 《电子器件》 EI CAS 2004年第1期15-18,共4页 Chinese Journal of Electron Devices
基金 国家自然科学基金(60036010) 教育部博士点基金(2000069823)
关键词 碳纳米管 场发射显示器 伏安特性曲线 光亮度 测试方法 Carbon nanotubes Field emission display I-V characteristics Luminance Measurement
分类号 TN304.18 [电子电信—物理电子学] TN104.3 [电子电信—物理电子学]
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参考文献12

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二级参考文献10

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共引文献16

同被引文献7

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二级引证文献8

电子器件
2004年 第1期

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