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烧结过程中毛细作用对钌基厚膜应变电阻的影响(英文) 被引量:1

Influence of Capillarity on the Ru-Based Thick Film Resistor in the Progress of Sintering
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摘要 通过应用毛细作用的的基本公式得到钉基厚膜应变电阻烧结阶段的模型。用Bi_2O_3和RuO_2合成Bi_2Ru_2O_7并进行试验,发现方阻随烧结时间和导电相粒径的增大而增大。用该模型解释了该现象,同时解释了导电相不同的体系,应尽导电相含量一样,但方阻不同,以及方阻随玻璃粘度增大而减小。 The fundamental formula of capillarity is employed on the Ru-based thick film strain resistors in the progress of sintering, and we got a mathematical model of this stage. Bi2 O3 and RuO2 are synthesized to produce Bi2 Ru2 O7 . This model can interpret the sheet resistance enhances with the aggrandizement of sintering time and the accretion of conductive particles radius. We also explain that, for two different conductive phase systems, although the conductive phase contents are identical, the sheet resistances are different and the sheet resistance reduces with aggrandizement of glass viscosity.
作者 丁鹏 马以武
出处 《电子器件》 CAS 2004年第1期66-68,共3页 Chinese Journal of Electron Devices
基金 The project is supported by NSFC, granted (No 60175027 60374050)
关键词 Ru基厚膜应变电阻 毛细作用 方阻 Ru-based thick film strain resistors capillarity sheet resistance
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参考文献7

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同被引文献5

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