锑掺杂二氧化锡薄膜的导电机理及其理论电导率

Conducting mechanism and theory conductivity of antimony doped tin oxide

归纳总结了锑掺杂二氧化锡(ATO)的导电机理。晶格的氧缺位、5价Sb杂质在SnO2禁带形成施主能级并向导带提供n型载流子是ATO导电的两种主要机理。从材料的电导率公式出发,定性分析了二氧化锡中掺杂锑的含量存在理论最佳值,根据已有模型计算证明了锑掺杂二氧化锡电导率存在理论上限。掺杂二氧化锡中锑的最佳理论含量为1.49%(质量百分数),锑掺杂二氧化锡理论电导率最高为0.217×104(Ω·cm)-1,氧空位对ATO电导率的贡献为0.1506×104(Ω·cm)-1。

The conducting mechanism of antimony doped tin oxide is sumed up. Oxygen vacanices and dopants,Sb5+,supply n-type charge carries to the conductibiliity of SnO2 are two conducting mechanisms. Using the formula of the materials conductibility,this paper also proves that there exists the optimum content of the Sb in ATO. Based on the exisitent mode,this paper also proves there is conductibility upper limit of ATO,the optimum dopant,Sb,in ATO is 1 49%(quality percent),the theory max conductibility of ATO is 0 217×104(Ω·cm)-1,The contribution of the oxygen vanccies to ATO conductibility is σ2=0 1506×104(Ω·cm)-1.