摘要
系统地介绍了硫系化合物随机存储器(C-RAM)的原理、相关材料、研究现状、特点及今后的发展趋势以及中科院上海微系统与信息技术研究所在C-RAM方面的研究进展。C-RAM由于具有高速读取、高可擦写次数、非易失性、元件尺寸小、功耗低和成本低等优点,被认为是最有可能取代目前的FLASH、DRAM和SRAM而成为未来半导体存储器的主流产品。
The progress of chalcogenide random access memory(C-RAM)were reviewed systema-tically,including the memory principle,relative materials,current research state and development trend. Finally,the research progress about C-RAM in the Research Center of Functional Semiconductor Film Engineering Technology was introduced. Due to its advantages in high read rate,high write times,nonvolatile,small cell size,low cell energy consumption,and low cost,C-RAM has the capability to replace the conventional FLASH,DRAM,and SRAM and becomes the major semiconductor memory in the future.
出处
《微纳电子技术》
CAS
2004年第4期1-7,39,共8页
Micronanoelectronic Technology
基金
国家863计划资助项目(2003AA32720)
上海市纳米科技与产业发展促进中心资助项目(0352nm016
0359nm004
0252nm084)
国家973资助项目(001CB610408)
基础研究项目前沿课题(2001CCA02800)
上海市科委资助项目(03dz11009)