硫系化合物随机存储器研究进展

A review and recent progress on C-RAM

系统地介绍了硫系化合物随机存储器(C-RAM)的原理、相关材料、研究现状、特点及今后的发展趋势以及中科院上海微系统与信息技术研究所在C-RAM方面的研究进展。C-RAM由于具有高速读取、高可擦写次数、非易失性、元件尺寸小、功耗低和成本低等优点,被认为是最有可能取代目前的FLASH、DRAM和SRAM而成为未来半导体存储器的主流产品。

The progress of chalcogenide random access memory(C-RAM)were reviewed systema-tically,including the memory principle,relative materials,current research state and development trend. Finally,the research progress about C-RAM in the Research Center of Functional Semiconductor Film Engineering Technology was introduced. Due to its advantages in high read rate,high write times,nonvolatile,small cell size,low cell energy consumption,and low cost,C-RAM has the capability to replace the conventional FLASH,DRAM,and SRAM and becomes the major semiconductor memory in the future.