摘要
采用低电阻率的p型单晶硅,在高温条件下扩散金属锰的方法,可以得到高补偿和过补偿硅.在常温下,测试扩散后电阻率分别为3.2×103、4.8×104、1.3×105、3.2×105Ω·cm的几种样品的温度敏感特性,其相应的B值分别为5 103,5 600,6 103,6 502 K.这种扩锰硅是一种温度敏感材料,笔者将报道这些实验结果并讨论其热敏特性.
High compensated silicon and over compensated silicon were acquired by diffiusing Mn-metal into p-type
silicon of low resistivity at high temperature. The acquired samples of resistivity of 3.2×10~3Ω·cm, 4.8×10~4Ω·cm, 1.3×10~5Ω·cm,
3.2×10~5Ω·cm are measured. Their B-values are 5103, 5600, 6103, 6502 K, respectively. The compensated silicon is very
sensitive to ambient temperature.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第5期23-24,28,共3页
Electronic Components And Materials
基金
国家外国专家局科研基金(20036500065)
中国科学院西部之光人才培养研究基金
关键词
补偿硅
高补偿
过补偿
温敏特性
compensated silicon
high compensation
over compensation
thermal-sensitive characteristic
