摘要
为获得一种在常温下具有正温特性的热敏电阻,采用硅单晶材料,利用其迁移率随温度变化的规律设计并制成了硅正电阻温度系数热敏电阻器。测量表明,其电阻值随温度升高而增大。温度系数为(0.6％～0.8％)℃^(-1),在-50～+100℃温度范围内具有准线性。硅正电阻温度系数热敏电阻器特别适合于各种半导体器件和传感器的温度补偿。
Based on the law of temperature dependent mobility of silicon single crtstal, a silicon thermistor of positive
temperature coefficient has been designed and manufactured with silicon single crystal. Measurement results show that its
resistance increases with the increase of temperature. Temperature coefficient is 0.6%～0.8%·℃^(-1). In the range of -50～+100
℃, it exhibits quasi-linearity.The thermistor can be used for temperature compensation in various semiconductor devices and
sensors.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第5期32-34,共3页
Electronic Components And Materials
关键词
硅单晶热敏电阻器
正温度系数
迁移率
silicon single crystal thermistror
positive temperature coefficient
mobility
