室温溅射沉积ZnO:Al薄膜的工艺

ZnO:Al Films Prepared by RF Magnetron Sputtering at Room Temperature

ZnO:Al薄膜是一种N型宽带隙半导体材料,由于其大的载流子浓度和光学禁带宽度而表现出优良的光电特性。采用射频磁控溅射工艺,在室温下用氧化锌铝陶瓷靶(3wt%Al2O3)溅射沉积透明导电ZnO:Al薄膜,研究了各工艺参数,如氧流量、工作气压和射频功率对其光电特性的影响。实验结果表明:通氧量与靶材中含氧比例存在紧密联系,本实验在氧流量为0sccm,射频功率400W,Ar气为0.7Pa,溅射时间为2.5h的条件下,制备的ZAO薄膜最小方块电阻为65Ω/□,薄膜表面略显黄色。

Al-doped ZnO film is an n-type,wide band gap semiconductor with outstanding electrical and optical properties owing to both high carrier concentration and big optical band gap. Transparent conductive ZnO:Al film was prepared at room temperature by RF magnetron sputtering with ZnO target mixed with Al_2O_3(3wt%). Effects of deposition parameterson conductivity, such as oxygen flux, argon pressure and RF power,are studied. Experiment results show that oxygen current has much to do with O/Zn content of the target. Under experiment conditions that oxygen current is 0SCCM, sputtering power is 400W, argon pressure is 0.7Pa,and sputtering time is 2.5 hours, the minimum sheet resistance of the prepared film is about 65Ω/□, and the color of the film appears rather yellow.