摘要
结合垂直腔面发射激光器的制备,研究了AIAs选择性氧化工艺中氧化炉温、氮气流量、水温等条件和AlAs层的横向氧化速率之间的关系,并得到了可精确控制氧化过程的工艺条件,在优化的工艺条件下运用湿氮氧化制备出InGaAs/GaAs垂直腔面发射激光器,实现了器件的室温脉冲激射。
The relation between the lateral oxidizing rate of AlAs thin layers and process
conditions such as furnace temperature, N_2 flow rate and water temperature in AlAs selective wet
oxidation,as well as their influence on oxidation results has been investigated for the fabrication
of vertical-cavity surface emitting laser (VCSEL). Process conditions which can control the
oxidation procedure and uniformity precisely are described. Pulsed lasing was realized at room
temperature.
出处
《半导体光电》
CAS
CSCD
北大核心
2004年第2期98-100,114,共4页
Semiconductor Optoelectronics
基金
吉林省基金(20020604)
国家自然科学基金(10104016).
关键词
垂直腔面发射激光器
选择性氧化
分子束外延
vertical-cavity surface emitting laser(VCSEL)
selective oxidation
MBE
