摘要
实验研究了不同表面处理方法和不同退火条件对GaN上的Ti/Al电极的影响,用CH_3CSNH_2/NH_4OH处理后的GaN材料的荧光光谱强度最高,在该材料上制作的Ti/Al电极的欧姆接触电阻率最小。通过欧姆接触电阻率,I-V曲线,X射线衍射等手段,分析了GaN与Ti/Al电极接触表面在退火过程中的固相反应,提出了二次退火的方法。
Ti/Al Ohmic contact on n-GaN is studied with various surface-treatment or
various annealing condition. After treated the surface using CH_3 CSNH_2/NH_4 OH, the PL
intensity of GaN is greatly improved and Ⅰ-Ⅴ characteristic of Ti/Al Ohmic contact is best. The
electrodes annealed in various temperatures are studied by using Ⅰ-Ⅴ characteristics analysis and
X-ray diffraction spectroscopy (XRD). The solid phase reaction is analyzed and a new two-step
annealing method is suggested.
出处
《半导体光电》
CAS
CSCD
北大核心
2004年第2期158-161,共4页
Semiconductor Optoelectronics
基金
国家重点基础研究发展规划项目(G20000683-86).
关键词
GAN
欧姆接触
表面处理
退火
GaN
Ohmic contact
surface treatment
annealing
