摘要
应用疏水处理方法成功实现了Si/InP的键合,然后通过对InP和Si的表面XPS能谱分析得到界面信息,从而了解键合机理。I-V曲线也反应了键合界面的性质,通过450、550℃退火样品的伏安特性可知道,对于InP/Si键合结构而言,退火温度与界面特性应该存在最佳值。
Bonding of Si/InP wafers is attached importance to the fabrication of
optoelectronic elements. The bonding of Si/InP wafers is successfully realized by using
hydrophobic surface cleaning method. And then the interfacial information can be known from
XPS spectrum, from which the bonding mechanism can be understand. The interfacial quality is
also reflected through Ⅰ-Ⅴ curves. Compared Ⅰ-Ⅴ performance at different temperature for Si/InP
bonding structure, interface quality should have a optimal value with the rising temperature
because of different thermal coefficients.
出处
《半导体光电》
CAS
CSCD
北大核心
2004年第2期139-142,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金(60006004).
