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光刻系统用氟化钙晶体的研究进展 被引量：3

Research and Development Status of Calcium Fluoride Crystals Used in Lithography System
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摘要 解释了氟化钙晶体能被应用在光刻系统和掀起研究热潮的原因,概述了氟化钙晶体的研究和发展现状,指出了目前氟化钙晶体在研究和发展过程中要解决的重要问题和措施,最后对氟化钙晶体在光刻系统中的发展前景作了展望. The reasons why calcium fluoride crystals can be used in lithography system were explaned. The research and development status of calcium fluoride crystals was summarized. Meanwhile the important problems need to be resolved in the process and measures that should be taken into consideration were pointed out. In the end the development foreground was expected.
作者 董永军 周国清 杨卫桥 苏良碧 徐军
机构地区 中国科学院上海光学精密机械研究所
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2004年第3期449-455,共7页 Journal of Inorganic Materials
基金 上海市科技发展基金(022261053)
关键词 氟化钙 晶体 紫外 光刻 157nm 半导体 calcium fluoride crystal UV lithography semiconductor
分类号 O782 [理学—晶体学]
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参考文献20

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共引文献1

同被引文献37

  • 1李艳红,姜国经.CaF_2单晶体应用研究[J].人工晶体学报,2000,29(S1). 被引量：15
  • 2Dressler L,Rauch R,Reimann R. On the inhomogeneity of refractive index of CaF2 crystal or high performance optics[J].{H}Crystal Research and Technology,1992,(03):413.
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  • 4Mouchovski I T,Genov V B,Pirgov L V. Preparation of CaF2 precursors for laser grade crystal growth[J].{H}Materials Research Innovations,1999,(03):138.
  • 5Verstraete M,Gonze X. First-principles calculation of the electronic,dielectric,and dynamical properties of CaF2[J].{H}Physical Review B:Condensed Matter,2003,(195123):1.
  • 6Shi H,Eglitis R I,Borstel G. First-principles calculations of the CaF2 bulk and surface electronic structure[J].{H}PHYSICA STATUS SOLIDI B-BASIC RESEARCH,2005,(10):2041.
  • 7Petit V,Doualan J L,Camy P. CW and tunable laser operation of Yb3+ doped CaF2[J].{H}Applied Physics(B),2004.681.
  • 8Lucca A,Debourg G,Jacquemet M. Highpower diode-pumped Yb3+:CaF2 femtosecond laser[J].{H}Optics Letters,2004,(23):2767.
  • 9Pedroni M,Piccinelli F,Passuello T. Lanthanide doped upconverting colloidal CaF2 nanoparticles prepared by a single-step hydrothermal method:toward efficient materials with near infrared-to-near infrared upconversion emission[J].Nanoscale,2011.1456.
  • 10Su L B,Xu J,Xue Y H. Low-threshold diode-pumped Yb3+,Na+:CaF2 self-Q-switched laser[J].{H}Opt Erpress,2005,(15):5635.

引证文献3

二级引证文献2

无机材料学报
2004年 第3期

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