摘要
Sn O2 :F透明导电薄膜是一种广泛用于显示技术和能量转换技术的重要材料。本文在超声喷雾热解成膜技术基础上 ,对沉积装置进行了改进 ,同时对反应液配方进行了优化 ,在较低温度制备出透明 Sn O2 :F导电薄膜。用 XRD、UV/Vis、SEM、原子力显微镜分析测试方法对沉积薄膜的结构、形貌和光学、电学性质进行了研究。结果表明 ,在 360°C沉积温度下制备的 Sn O2 :F薄膜 ,其方块电阻为 4.7Ω,( 2 0 0 )面择优取向明显 ,薄膜晶粒均匀 ,表面形貌有所改善 ,透明度有所提高。
The transparent conducting SnO 2:F thin film is extensively used in displaying and energy-conversion technology. In this paper SnO 2:F thin films were deposited by ultrasonic spray pyrolysis technology. The dependence of structure, morphology and opto-electrical characteristics on substrate temperature, concentration in reaction solution were investigated by XRD, UV/Vis, SEM and AFM. The results show that the microstructure and resistivity of SnO 2:F thin films are intensively dependent on substrate temperature. Through optimization of the concentration in reaction solution, transparent low-resistance SnO 2:F thin film is deposited successfully.
出处
《光电子技术》
CAS
2004年第1期4-7,20,共5页
Optoelectronic Technology
基金
国家高技术研究发展计划 ( 863计划 ) ( No.2 0 0 1 AA5 1 3 0 1 0 )
国家重大基础研究计划 ( 973计划 ) ( No.G2 0 0 0 0 2 82 0 8)
