摘要
实验发现某些 UV- 1 1 0硅紫外增强型光伏探测器件的开路电压值随入射光强增大反而下降 ,在一定入射光强下出现峰值。实验和理论分析指出 ,这种异常光电特性的产生是由于器件中存在一个与主结方向相反的寄生 PN结 ,寄生结是 Al电极和 n- Si衬底之间合金化工艺控制不当而引入的肖特基结。
For some of UV-110 ultraviolet photovoltaic detectors, the open circuit voltage appears a peak value under certain illumination, then decreases with further increasing illumination. Based on a series of experimental analysis, we attribute this abnormal phenomena to a reverse parasitic Schottky junction existing in the device. The parasitic Schottky junction may originate from improper alloying technical control.
出处
《光电子技术》
CAS
2004年第1期16-20,共5页
Optoelectronic Technology
