SiH_4同步外延对SIT电学参数的影响

Effects of SiH_4 Synchronous Epitaxial Growth Condition on the Electrical Parameters of SIT Device

通过对SIT器件研制的大量实验,研制了SiH_4同步外延工艺对SIT器件主要电学数(BV_(GSO),BV_(GDO)和 G_m 等)的影响,认为该器件的栅源击穿电压 BV_(GSO) 和跨导 G_m 强烈地依赖于同步外延的生长条件(生长温度,时间及 SiH_4∶PH_3∶H_2流量比),而栅漏击穿电压 BV_(GDO)主要取决于扩硼后的单結特性,SiH_4同步外延生长条件对其影响不大.最后找到了这种器件电学参数值所要求的 SiH_4同步外延的稳定生长条件.

The effects of S_iH_4 synchronous epitaxial growth conditions on the ??major electrical parameters of SIT device were studied by using manyexperiments of fabricating SIT devices.The major parameters are gate-drain breakdown voltage BV_(gdo),gate-source breakdown BV_(gso)and tran-sconductance Gm.It is pointed out that the BV_(gso)and the Gm of thedevice strongly depend on the S_iH_4 synchronous epitaxial growth condi-tions which are the growth temperature,growth duration and the ratioof S_iH_4:PH_3∶H_2.But the BV_(gdo) mainly depends on the characteristicsof the single junction after B-diffusing.Finally,stable growth conditionshave been found for fabricating SIT device.