热激励硅谐振式压力传感器的研制

Development of Thermally Excited Si Resonant Pressure Sensor

介绍了基于表面微加工工艺和多孔硅牺牲层技术,设计并制作出梁膜一体化的热激励硅谐振梁压力传感器,给出了制作的工艺过程和参数,测试了传感器在真空中开环状态下的谐振频率-压力特性及幅频特性,其灵敏度达到54 89Hz/kPa,Q值大于20000,0～300kPa范围内线性相关系数为0 9997。

Using porous silicon as a sacrificial layer,a thermally excited Si-based resonant pressure sensor with integrated Si3N4 resonant beam and Si reflecting membrane is fabricated successfully through surface micromachining processes.Open loop test is executed in vacuum.The sensitivity of the sensor is 54.89 Hz/kPa with a linear correlation coefficient of 0.999 7 over a range of 0～300 kPa,and the Q factor is bigger than 20 000.