摘要
首先我们制备了结构为 :ITO/SiO2 /ZnS :Cu/SiO2 /Al的薄膜电致发光器件 ,其电致发光为绿色的宽带发射 .然后将发光材料换成Zn1 -xSrxS :Cu ,制备同样结构的薄膜电致发光器件 .结果发现电致发光光谱由原来的 5 5 0nm单个峰的宽带发射变成了双峰发射 .峰值位置分别为 430nm和 5 30nm左右 ,而且随Sr浓度的变化而不同 .
Frst of all we made thin film electroluminescent device with structure ITO/SiO 2/ZnS:Cu/SiO 2/Al, its electroluminescence is green wide band emission. Then we change luminescent materials ZnS:Cu into Zn 1-xSr xS:Cu, made thin film electroluminescent device with the same structure. Result we found electroluminescent optical spectrum from original 550 nm wide band emission of single peak value change into split-blip emission. The position of peak value is separately 430 nm and 530 nm around. Furthermore it is variant with the variance of Sr concentration. Blue light emission of Cu ion is mainly as a result of that the mix Sr result in the increasing of the band gap of ZnS base material and it is not easy that electron in blue luminescent center energy level is ionized to conduction band.
出处
《哈尔滨师范大学自然科学学报》
CAS
2004年第2期41-45,共5页
Natural Science Journal of Harbin Normal University
