用高频电容—电压法研究GD-a-Si:H的隙态密度

A Study on Density of Gap States in GD-a-Si:H Films by High Frequency Capacitance-Voltage Method

用高频电容——电压法(H—C—V)研完了 GD—a—si∶H 的隙态密度,得到了平带到耗尽范围内的隙态密度分布,研究了 a—Si∶H 的电子亲和势 qx_a=3.35ev 及 a—Si∶H/n—C—Si 异质结能带图.

The density of gap states in GD-a-si∶H films was studied by high f-requency capacitance-voltage(H-C-V)method.The distribution of the gap.states density was obtained from flat band to exhaust.The electron affin-ity qxa and energy band figure of amorphous silicon/crystalline silicon h-eterojunction were also investigated.