摘要
采用离子束溅射反应沉积技术 ,以高纯 N2 为工作气体 ,利用在不同气压下产生的离子束轰击石墨靶 ,在石英基片上溅射出的碳原子与氮离子反应 ,沉积出 a- CNx 薄膜 .在室温下 ,研究薄膜的暗电导和在卤素光源照射下的光电导、光响应增益、响应时间等性质 ,以及制备工艺和掺杂、氢化对这些性质的影响及关系 .实验结果表明 :未掺杂的 a- CNx 薄膜的光响应增益达 1 8,磷掺杂薄膜的光响应增益为 3.0 ,经过氢化处理的未掺杂 a- CNx 薄膜的光响应增益为 30 ,光响应时间大约为 30 0 s.
Amorphous carbon nitride a-CN .x. thin films are prepared by reactive ion beam sputtering deposition method using N 2 as working gas and a graphite target .The substrates are crystalline silicon and quartz crystal.The properties of dark conductivity and photo response excited by a halogen lamp are studied,which varies with the processing conditions,phosphor doping,and hydrogen-plasma treatment.These experiments show that the photocurrent response gain of undoped thin film is 18,which is 3.0 after phosphorus soaking.After hydrogen-plasma treatment,it increases to 30.The response time of all of the thin films is about 300.
