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2.4GHz0.25μmCMOS集成低噪声放大器的设计 被引量:5

Design of 2.4GHz 0.25μm CMOS integrated low noise amplifier
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摘要 采用TSMC 0.25mm CMOS工艺,设计了单端和差分两种工作在2.4GHz可应用于蓝牙的全集成低噪声放大器。详述了设计过程并给出了优化仿真结果。经比较得出,差分低噪声放大器为了取得和单端低噪声放大几乎同样的性能,要消耗双倍的功耗和面积,但因其对共模信号干扰的免疫力以及对衬底耦合的抑制作用而越来越受到青睐。 Two 2.4GHz integrated low noise amplifiers(LNA) available to bluetooth, one of whichis single-ended and the other is differential, have been designed in TSMC 0.25μm CMOS process.Compared with the single-ended LNA, the differential LNA consumes double power and chip dies inorder to obtain the nearly same performance, but nevertheless it is more and more preferred becauseof its immunity to common-mode signal interference and rejection to substrate coupling.
出处 《半导体技术》 CAS CSCD 北大核心 2004年第5期81-85,共5页 Semiconductor Technology
基金 上海市科委PDC专项资助计划资助项目(017015030)
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参考文献5

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同被引文献37

  • 1姚飞,成步文.1GHz 0.5μm CMOS低噪声放大器的设计[J].Journal of Semiconductors,2004,25(10):1291-1295. 被引量:4
  • 2黄煜梅,叶菁华,朱臻,洪志良.2.4GHz、增益可控的CMOS低噪声放大器[J].固体电子学研究与进展,2004,24(4):498-504. 被引量:4
  • 3马涛,柴常春,康英,杨银堂.一种基于CMOS工艺的差分低噪声放大器设计[J].北京电子科技学院学报,2007,15(2):36-38. 被引量:1
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  • 6Trung-Kien Nguyen, Chung-Hwan Kim, Gook-Ju Ihm, et al. CMOS Low-Noise Amplifier Design Optimization Techniques [J]. IEEE Transactions On Microwave Theory And Techniques, 2004, 52(5): 1433-1442.
  • 7Tae Wook Kim, Kwyro Lee. A Simple and Analytical Design Approach for Input Power Matched On-chip CMOS LNA [J]. Journal of Semiconductor Technology And Science, 2002, 2(1): 19-29.
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