半导体功率放大激光器及列阵的研究

Study on the Array and Laser of Semiconductor Power Amplication

研究一种InGaAsP/InP材料的高功率半导体功率放大器 (LD—SLA)及列阵。器件为双异质结增异导引氧化物条形结构。采用直接耦合方式将半导体激光器 (LD)与功率放大器(SLA)集成一体。输出功率提高一个数量级。并在器件端面镀高反射膜和增透膜 ,使反射率和透射率由无膜时的 31%、 6 9%提高到 94 %以上。提高激光输出 ,保护器件端面。

A novel high power LD – SLA of InGaAsP/InP matrial has been studied。 Device is DHL structure of gain-guide and oxide-strripe。It uses direct coupling of the LD with the SLA 。Output power has been amplified an order。High reflecting coatings and anti- reflective on the cavity surface of LD-SLA。The transmission coefficent and reflective coefficient have been changed respectively from 69% and 31% ,in the case without coatings ,to above 94% 。By this, the device cavity surface have been protected ,the output power increased。