轴向应变导致柔性电路的裂化研究

Cracking study on the flexible circuits under uniaxial tensile strain

本文研究了在柔性塑料衬底上的均匀的无定形Si和SiNx 薄膜的裂化规律。结果表明 ,在单轴向拉力应变下 ,虽然衬底仍保持完整 ,但是半导体薄膜破裂为直的并行的阵列。当应变大于一个临界值后 ,裂纹的密度成线性增长。

Cracking rules of homogeneous, amorphous Si and SiN x thin film on compliant, plastic substrates have been studied. The results showed that under uniaxial tensile strain, the film cracks were in an array of essentially straight and parallel lines, while the substrates remained intact. When the strain was larger than a critical value, the crack density increased linearly. The topographies of the cracks have been investigated and analyzed by an atomic force microscope.