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Synthesis and Characteristics of Diamond-like Carbon Films Deposited on Quartz Substrate 被引量:2

Synthesis and Characteristics of Diamond-like Carbon Films Deposited on Quartz Substrate
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摘要 Diamond-like carbon (DLC) films are deposited on quartz substrate using pure CH4 in the surface wave plasma equipment. A direct current negative bias up to -90 V is applied to the substrate to investigate the bias effect on the film characteristics. Deposited films are characterized by Raman spectroscopy, infrared (IR) and ultraviolet-visible absorption techniques. There are two broad Raman peaks around 1340 cm-1 and 1600 cm-1 and the first one has a greater sp3 component with an increased bias. Infrared spectroscopy has three sp3 C-H modes at 2852 cm-1, 2926 cm-1 and 2962 cm-1, respectively and also shows an intensity increase with the negative bias. Optical band gap is calculated from the ultraviolet-visible absorption spectroscopy and the increased values with negative bias and deposition time are obtained. After a thermal anneal at about 500℃ for an hour to the film deposited under the bias of-90 V, we get an almost unchanged Raman spectrum and a peak intensity-reduced IR signal, which indicates a reduced H-content in the film. Meanwhile the optical band gap changed from 0.85 eV to 1.5 eV. Diamond-like carbon (DLC) films are deposited on quartz substrate using pure CH4 in the surface wave plasma equipment. A direct current negative bias up to -90 V is applied to the substrate to investigate the bias effect on the film characteristics. Deposited films are characterized by Raman spectroscopy, infrared (IR) and ultraviolet-visible absorption techniques. There are two broad Raman peaks around 1340 cm-1 and 1600 cm-1 and the first one has a greater sp3 component with an increased bias. Infrared spectroscopy has three sp3 C-H modes at 2852 cm-1, 2926 cm-1 and 2962 cm-1, respectively and also shows an intensity increase with the negative bias. Optical band gap is calculated from the ultraviolet-visible absorption spectroscopy and the increased values with negative bias and deposition time are obtained. After a thermal anneal at about 500℃ for an hour to the film deposited under the bias of-90 V, we get an almost unchanged Raman spectrum and a peak intensity-reduced IR signal, which indicates a reduced H-content in the film. Meanwhile the optical band gap changed from 0.85 eV to 1.5 eV.
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2004年第2期2255-2258,共4页 等离子体科学和技术(英文版)
基金 The project supported by the National Natural Science Foundation of China (No. 19835030 and 19875053)
关键词 diamond like carbon (DLC) Raman spectrum infrared absorption spectroscopy optical band gap diamond like carbon (DLC) Raman spectrum infrared absorption spectroscopy optical band gap
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  • 1[1]Has Z, Mitura S. Thin Solid Films, 1985, 128: 353
  • 2[2]Xiong F, Chang Y Y, Chang R P H. Physical Review B, 1993, 48: 8016
  • 3[3]Kuramoto K, Domoto Y, Hirano H, et al. Applied Surface Science, 1997, 113/114: 227
  • 4[4]Shim K S, Kim S M, Bac S H, et al. Applied Surface Science, 2000, 154: 482
  • 5[5]Erdemir A, Eryilmaz O L, Nilufer I B. et al. Diamond and related materials, 2000, 9: 632
  • 6[6]Ma H Z, Zhang L, Yao N, et al. Diamond and related materials, 2000, 9: 1608
  • 7[7]Jayatissa A H, Sato F, Saito N, et al. Carbon,2000, 38: 1145
  • 8[8]Aoqui S, Ebihara K, Ikegami T. Composites part B-engineering, 1999, 30(7): 691 ~ 698
  • 9[9]Dowling D P, Donnelly K, Obrien T P, et al. Diamond and related materials, 1996, 5 (3~5):492~495
  • 10[10]Panwar O S, Sarangi D, Kumar S, et al. Journal of Vacuum Science & Technology A, 1995,13(5): 2519~2524

同被引文献23

  • 1Novotn M, Jelinek M, Buli J,et al. Study of NanocrystaUine Diamond Film Growth in rf Hybrid Laser Deposition Systems in O2, H2 and H2 + Ar ambients[ J ]. Applied Physics A : Materials Science & Processing,2004 (79) : 1267 - 1270.
  • 2Robertson J. Mechanisms of Electron Field Emission from Diamond,Diamond-like Carbon,and Nanostructured Carbon[ J ]. J Vac Sci Technol B,1999,17(2):659-665.
  • 3Suk Jae Chung, Jong Hyun Moon, Kyu Chang Park,et al. Stability of Electron Emission Current in Hydrogen-free Diamond- like Carbon Deposited by Plasma Enhanced Chemical Vapor Deposition [ J ]. J Appl Phys, 1997 (82) :4047 -4051.
  • 4Lee Y C,Lin S J,Chia C T,et al. Synthesis and Electron Field Emission Properties of Nanodiamond Films [ J]. Diamond Relat. Mater,2004 ( 13 ) :2100 - 2104.
  • 5Kobashi K,Watanabe A, Ando Y, et al. Observation of Electron Field Emission Patterns from B-doped Diamond Films [ J ]. Diamond Relat Mater,2004 ( 13 ) :2113 - 2116.
  • 6Obraztsov A N, Pavlovsky L Y, Voldov A P. Low-voltage Electron Emission from Chemical Vapor Deposition Graphite Films[ J ]. J Vac Sci Technol B, 1999,17 ( 2 ) :674 - 678.
  • 7Zhu W,Konchanski G P,Jin S,et. al. Electron Field Emission From ion-implanted Diamond[J]. Appl Phys Lett,1995 (67) :1157 - 1160.
  • 8Koenigsfeld N,Philosoph B, Kalish R. Field Emission Controlled by the Substrate/CVD Diamond Interface[ J]. Diamond and Relat Mater,2000(9):1218- 1221.
  • 9Wang S G,Zhang Qing,Yoon S F, et al. CVD Diamond Nucleation Enhanced by Ultrasonic Pretreatment Using Diamond and Mixture of Diamond and TaC Powders [ J ]. Diamond Relat Mater,2002 (11 ) :1683 -1689.
  • 10Tianliang Hao, Chengru Shi. Study on Enhancement of Diamond Nucleation on Fused Silica Substrate by Ultrasonic Pretreatment [ J ]. Diamond Relat Mater, 2004 ( 13 ) :465 - 472.

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