期刊文献+

Sheet Resistance and Gas-Sensing Properties of Tin Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition 被引量:1

Sheet Resistance and Gas-Sensing Properties of Tin Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition
下载PDF
导出
摘要 Tin oxide (SnO2) thin films are prepared at different temperatures by plasmaenhanced chemical vapor deposition (PECVD). The structural characterizations of the films are investigated by various analysis techniques. X-ray diffraction patterns (XRD) show that the phase of SnO2 films are different at different deposition temperatures. The sheet resistance of the films decreases with increase of deposition temperature. X-ray photoelectron spectroscopy (XPS) shows that the SnO2 thin film is non-stoichiometric. The sheet resistance increases with increase in oxygen flow. Sb-doped SnO2 thin films are more sensitive to alcohol than carbon monoxide, and its maximum sensitivity is about 220%. Tin oxide (SnO2) thin films are prepared at different temperatures by plasmaenhanced chemical vapor deposition (PECVD). The structural characterizations of the films are investigated by various analysis techniques. X-ray diffraction patterns (XRD) show that the phase of SnO2 films are different at different deposition temperatures. The sheet resistance of the films decreases with increase of deposition temperature. X-ray photoelectron spectroscopy (XPS) shows that the SnO2 thin film is non-stoichiometric. The sheet resistance increases with increase in oxygen flow. Sb-doped SnO2 thin films are more sensitive to alcohol than carbon monoxide, and its maximum sensitivity is about 220%.
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2004年第2期2259-2264,共6页 等离子体科学和技术(英文版)
基金 The project partially supported by Natural Science Foundation of Guangdong Province (No. 021169 and 000675) Jinan University (No. 445046) Science and Technology Plan Foundation of Guangdong Province (No. 2002C40505)
关键词 SnO2 thin film PECVD sheet resistance gas sensibility SnO2 thin film PECVD sheet resistance gas sensibility
  • 相关文献

参考文献10

  • 1Mizuhashi M J.Non-cryst[].Solid.1980
  • 2Yan G Z,Tang Z A,Chan P C H,et al. Sensors and Actuators B Chemical . 2002
  • 3Park S S,Mackenzie J D. Thin Solid films . 1996
  • 4Briand D,Labeau M,Currie J F,et al. Sensors and Actuators . 1998
  • 5Ray S C,Karanjai M K,Dasgupta D. Thin Solid films . 1997
  • 6Shishkin N Y,Zharsky I M,Lugin V G,et al. Sensors and Actuators . 1998
  • 7Stryhal Z,Pavlik J,Novak S,et al. Vacuum . 2002
  • 8Jin Z,Zhou H J,Jin Z L,et al. Sensors and Actuators . 1998
  • 9Song S K,Cho J S,Choi W K,et al. Sensors and Actuators . 1998
  • 10Nicolas S,Patrick G,Laurent P,et al. Sensors and Actuators . 2002

同被引文献12

  • 1ECONOMOU D J.Modeling and simulation of plasma etching reactors for microelectronics[J].Thin Solid Films,2000,365:348-367.
  • 2SAMUKAWA S.Development of high-density plasma reactor for high-perform-ance processing and future prospects[J].Applied Surface Science,2002,192:216-243.
  • 3HUANG J H,LIN C H,CHEN H.Ion beam assisted deposition of TiN thin film on Si(100)[J].Materials Chemistry and Physics,1999,59:49-56.
  • 4SUCHANECK G, GUENTHER M, SORBER J, et al.Low-temperature PECVD of silicon dioxide on polymeric hydrogels[J].Appl Phys A,2003, 78(5):695-698.
  • 5HAN G C, LUO P, LI K B, et al.Growth and characterization of silicon nitride films on various underlying materials[J].Appl Phys A, 2000,74:243-247.
  • 6CHEN J F, REN Z X.Ion energy distribution in an ECR plasma chamber[J].Vacuum, 1999, 52:411.
  • 7菅井秀郎(日本).等离子体电子工程学[M].北京:科学出版社,2002.59.
  • 8杨孝龙,黄运添.电感耦合高频放电等离子体特性测试[J].西北大学学报(自然科学版),1998,28(4):289-294. 被引量:1
  • 9黄继颇,王连卫,高剑侠,沈勤我,林成鲁.超高真空电子束蒸发合成晶态AlN薄膜的研究[J].功能材料与器件学报,1998,4(4):277-280. 被引量:10
  • 10王平,杨银堂,徐新艳,杨桂杰.应用于超大规模集成电路工艺的高密度等离子体源研究进展[J].真空科学与技术,2002,22(4):274-281. 被引量:3

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部