湿氧钝化CdSe(110)表面的XPS分析

XPS Analysis of Passivation (110) Surface of CdSe Oxidized at Oxydol

用双氧水对CdSe单晶(110)表面进行钝化,采用X射线光电子能谱(XPS)分析了湿氧处理的CdSe(110)表面的化学特征。通过两次不同分析模式FAT(固定通能)和FRR(固定减速比)所得到的结果表明:CdSe表面出现Se偏析,表面上形成了SeOx(x<1),SeO、Cd(OH)2和CdCO3的高电阻稳定氧化层,消除了器件表面态,可以减少器件的表面漏电流和改善其信噪比。

After the surface of single crystal CdSe was oxidized at oxydol, chemical characteristics of (110) surface of CdSe was studied by means of X-ray photoelectron spectroscopy (XPS).Two different analysis, FAT (fixed analyzer transmission) model and FRR (fixed retarding ratio) model,show that the content of Se element is more than that of Cd element,and that the surface compounds are SeO_x(x<1),SeO,Cd(OH)_2 and CdCO_3, which are stable oxidized layer with high resistance and can eliminate the surface state of electronic apparatus and reduce the surface leaked electric current and improve the rate of signal to noise.