以乙醇为氧源生长ZnO薄膜中温度对光谱影响的研究

Study of Luminescence Dependence of ZnO Films on Growth Temperature by MOCVD Using Ethanol as MO Source

本文探索了以乙醇为氧源通过MOCVD方法生长ZnO薄膜的方法,着重研究了该实验中生长温度对薄膜发光光谱的影响。我们分别在350℃、370℃、380℃、400℃和420℃温度下生长了ZnO薄膜,并对其发光光谱进行了研究。结果表明适当地提高生长温度可以使近带边发光峰蓝移,但温度过高,使得峰位红移并展宽。在380℃的生长条件下得到了较好的光谱。370℃条件下还出现了474nm的发光峰,经退火后此峰消失。

More and more interest was focused on the study of ZnO because of its good properties .ZnO thin films were deposited on (0001)sapphire substrates by MOCVD using ethanol as MO source.ZnO thin films were grown at 350℃,370℃,380℃,400℃ and 420℃,respectively.The effect of growth temperature on the optical properties was investigated by means of photoluminescence (PL) spectrum.The results demonstrate the emission peak has a blue shift and then a red shift when increasing the growth temperature.Better PL was obtained at 380℃. There is a peak at 474nm when the growth temperature is 370℃. This peak disappears by anneal.