Sol-gel法制备掺钕钛酸铅铁电薄膜

Preparation of Nd-doped PbTiO_3 Thin Films by Sol-gel Method

采用sol gel法在P型Si(111)衬底上制备了Pb0.85Nd0.1TiO3(PNT)薄膜。用X射线衍射技术研究了退火温度对薄膜结构和结晶性的影响。同时还研究了薄膜的介电、铁电和绝缘性能。结果发现在600℃下退火1h的PNT薄膜呈钙钛矿结构;在0～5V范围内,薄膜的漏电流密度小于1.00×10-5A/cm2;在±5V的偏压范围内,C V记忆窗口宽度为2V;在零电压下,时间保持长达105～106s;在室温100kHz下,其介电常数为31.60,介电损耗为0.12。

Pb_(0.85)Nd_(0.1)TiO_3(PNT) thin films were grown on P-Si(111) substrates by sol-gel method. The effects of annealing temperature on the structural characteristic and crystallization of the films were examined by X-ray diffraction (XRD). The dielectric and ferroelectric properties and insulation characteristic were also studied. The results show that the film annealed at 600℃ for 1h presents perovskite phase. The leakage current density is below 1.00×10^(-5)A/cm^2 in the applied voltage range of 0-5V. The memory window in C-V curve is 2.0V in the applied voltage range of ±5V. The retention time estimated by measuring capacitance at zero voltage is about 10~5-10~6s. Dielectric constant and dielectric loss are 31.60 and 0.12 respectively at a frequency of 100kHz and room temperature.