高激光损伤阈值KDP晶体的生长

Growth of KDP Crystals with High Laser Damage Threshold

本文采取分次结晶的高纯 KDP 原料与无菌水配制 KDP 晶体生长溶液,以便降低杂质与细菌对晶体光学质量的影响。用电子计算机拟合 KDP 溶解度与温度成函数关系,推算出 KDP 晶体均匀生长的降温量,采用正交设计方法探索了四因素三水平对晶体生长与其形态的影响,寻找了高激光损伤阈值 KDP 晶体生长的适宜条件。

In this paper,the raw materials for growing KDP crystal werepurified by in-turn reorystallization method,which greatly reduced the contentof impurity.In order to avoid the influence of germs on the crystal quality,sterile water was used in preparing the solutions.Meanwhile,a definite andsuitable function was fitted to the solubility curve of KDP by computer,whichhelped to determine the rate of decreasing temperature in the even growth ofKDP crystals.For the first time,orthogonal design method was used to studyon several main factors that influenced the growth morphology and the laserdamage threshold of crystals.From the above work,the suitable condition forgrowing KDP crystal with high laser damage threshold were obtained.