多孔硅——一种新形态的硅材料

Porous Silicon──A New Morphological Form of Silicon

多孔硅（ｐｏｒｏｕｓ Ｓｉｌｉｃｏｎ）是指通过对氢氟酸溶液中的晶体硅片进行阳极氧化，在硅衬底上形成的多孔态的硅材料．本文介绍了多孔硅的形成规律和结构形貌，并对其光学性质和形成机制仆行了简要的评介，最后以多孔硅在大规模集成电路中的应用为主讨论了它的技术应用．

Porous silicon is a porous morphological form of silicon formed on the crystalline si subs-trate by anodization in HF solution. The structure morphologies, optical properties and formation mechanism are reviewed. Finally, applications in very large scale integration technology and other fields are discussed.