电子束蒸发在Si衬底上制备MgB_2超导薄膜

MgB_2 Superconducting Thin Films Deposited by E-beam Evaporation on Si Substrate

利用电子束蒸发法在 Si(111)衬底上制备了 Mg B2 超导薄膜。首先在衬底上按照 1∶ 2的原子比交替蒸发 Mg和 B,所形成的夹层先驱膜在 15 0 Pa99.99% Ar气氛下进行原位热处理 6 30℃× 30 m in。实验发现超导薄膜在正常态下无半导体电阻特性 ,超导起始转变温度为 2 4 .7K,零电阻温度为 16 .5 K。

MgB 2 superconducting thin films on Si(111) substrate were grown by electron beam evaporation. The precursor films of Mg and B layers with the atom ratio of 1:2 were deposited on Si(111) substrate, then in-situ annealed at 630℃×30min and 150Pa, 99.99% Ar pressure in the coating vacuum room. The resistance measurement shows that the sample has weak metal property other than semiconducting property on the normal state, and the zero resistance transition temperature is 16.5K with a onset transition temperature of 24.7K.