摘要
采用人造刚玉高温炉管对 4 H- Si C进行 16 2 0℃的离子注入后退火 .实验测试发现 ,在刚玉管壁析出的微量铝的作用下 ,Si C表面与残余的氧成分反应生成衍生物 Si OC,造成材料表面粗糙和反应离子刻蚀速率很低 .分别采用该种样片和正常样片制作了单栅 MESFET,对比测试的欧姆接触和 I- V输出特性 。
For very high temperature annealing (1620℃) after ion implantation for 4H silicon carbide (4H SiC),the residual components of Al and O in the alundum furnace impact seriously on the surface of material,which yields the derivation of SiOC.This causes a significant degradation of the 4H SiC surface characteristics according to the results of surface composition analysis.As validity,Ni/SiC ohmic contact measurement illustrates a higher specific contact resistance than the normal value by a factor of 2~3.Consequently the MESFET fabricated with this kind of 4H SiC material results in a degraded I V output performance compared with that of normal 4H SiC MESFET.
基金
国防科技预研基金资助项目 (批准号 :8.1.7.3 )~~
关键词
碳化硅
退火
表面分析
欧姆接触
I-V特性
silicon carbide
annealing
surface composition analysis
ohmic contact
I-V characteristics