摘要
采用一级温度补偿和电阻二次分压技术设计了一种高性能 CMOS带隙电压基准源电路 ,其输出电压为 0 .2 0～ 1.2 5 V,温度系数为 2 .5× 10 - 5/ K.该带隙电压基准源电路中的深度负反馈运算放大器为低失调、高增益的折叠型共源共栅运算放大器 .采用 Hspice进行了运算放大器和带隙电压基准源的电路仿真 ,用 TSMC0 .35 μm CMOS工艺实现的带隙基准源的版图面积为 6 4 5 μm× 196 μm.
The design of super performance CMOS band gap voltage reference with ultra low voltage output using the temperature compensation and resistive subdivision is described.The output of band gap voltage reference ranges from 0 20V to 1 25V and temperature coefficient is 2 5×10 -5 /K.A deep negative feedback operation amplifier used in band gap reference is a common source and gate folded cascade operation amplifier with a lower offset voltage and a higher gain.The characteristics of operation amplifier and band gap voltage reference are simulated by Hspice.The area of the CMOS band gap voltage reference is 645μm×196μm under the standard TSMC 0 35μm CMOS process.
基金
国家高技术研究发展计划资助项目(批准号 :2 0 0 2 AA1Z12 10)~~
关键词
CMOS
带隙电压基准源
二次分压
温度补偿
CMOS
band gap voltage reference
resistive subdivision
temperature compensation
