摘要
用电子薄膜应力分布测试仪测量了基底温度对Ag-MgF2金属陶瓷薄膜内应力的影响。结果表明:基底温度在300℃～400℃范围内,20.4mm选区内的薄膜平均应力最小,应力分布比较均匀,应力为张应力。XRD分析表明:当基底温度在300℃～400℃范围内,Ag-MgF2薄膜中的Ag和MgF2组分的晶格常数接近块体值,说明通过改变基底温度可以降低薄膜内应力。
It is investigated that the effect of substrate temperature on the residual stress and microstructure of Ag-MgF2 cermet films prepared by vapor deposition. X-ray diffraction (XRD) technique was employed to study the microstructure of the films. The results show that the average stress over ø20.4 mm round area is the least and the residual stress of the films appears to be tensile stress between 300°C and 400°C. Crystal lattice constants of Ag and MgF2 both approach the bulk values. The residual stress of the films can decreased by altering the substrate temperature.
出处
《复合材料学报》
EI
CAS
CSCD
北大核心
2004年第2期22-26,共5页
Acta Materiae Compositae Sinica
基金
国家自然科学基金(批准号:59972001)
安徽省自然科学基金(批准号:01044901)
安徽省教育厅科研基金(批准号:99JL0024)资助课题。
关键词
Ag—MgF2金属陶瓷薄膜
应力
基底温度
微结构
Film preparation
Magnesium compounds
Microstructure
Optical films
Residual stresses
Silver
Temperature
