期刊文献+

垂直腔半导体光放大器的增益特性数值分析 被引量:2

Numerical Analyses on Gain Properties of Vertical-cavity Semiconductor Optical Amplifiers
下载PDF
导出
摘要 结合垂直腔半导体光放大器(VCSOAs)的竖直微型腔结构带来的特性,在反射工作模式情况下,分析了VCSOAs的增益特性。通过数值求解激光器单模速率方程,给出了增益、饱和输出功率随泵浦光功率、出射腔面反射率的变化,分析了其功率动态范围。得出了提高腔面反射率能使增益得到增长,以及强泵浦光功率能起到平坦增益,增大增益的作用的结论。总结了VCSOAs设计中的一些规律,以作实际应用中参考。 Considered with the vertical micro-cavity effects of vertical-cavity semiconductor optical amplifiers, gain properties are analyzed in reflection mode. Based on solving laser single-mode rate equation numerically, the facts are given that optical gain and output saturation power are changing due to the variation of optical pump power or output mirror reflectivity. Dymanic power extension is analyzed simultaneously. A conclusion is made that the increase of output mirror reflectivity is with the increase of optical gain, and strong pump light power will lead to gain flatness and larger gain. Some results are summarized to providing references of practical applications.
出处 《激光与红外》 CAS CSCD 北大核心 2004年第2期116-118,共3页 Laser & Infrared
关键词 激光器 垂直腔半导体光放大器 增益饱和 增益特性 数值分析 VCSOAs vertical-cavity semiconductor optical amplifiers optical gain gain saturation
  • 相关文献

参考文献8

  • 1C Tombling, T Saitoh, T Mukai. Performance predictions for vertical-cavity semiconductor laser amplifiers [ J ].IEEE. J. Quantum Electron. , 1994, 30 ( 11 ): 2491 -2499.
  • 2N Bouché,B Corbett, R Kuszelewicz et al. Vertical-cavity amplifying photonic switch at 1.5μm [ J ]. IEEE Photonics Technology Letters. , 1996,8 (8): 1035 - 1037.
  • 3R Lewen, K Streubel, A Karlsson, et al. Experimental demonstration of a multifunctional long-wavelength vertical-cavity laser amplifier-detector [ J ]. IEEE Photonics Technology Letters. , 1998,10 (8): 1067 - 1096.
  • 4潘炜,张晓霞,罗斌,吕鸿昌,陈建国.垂直腔面发射半导体微腔激光器[J].物理,1999,28(4):210-216. 被引量:15
  • 5S Bjorlin, B Riou, P Abraham, et al. Long wavelength vertical-cavity semiconductor optical amplifiers [ J ]. IEEE J. Quantum Electron. , 2001,37 (2): 274 - 281.
  • 6O Mahony. Semiconductor laser optical amplifier for use in future fiber systems [ J ]. IEEE J. Lightwave Technol,1988,6(4) :531 - 544.
  • 7S Calvez,A H Clark, J M Hopkins et al. 1.3μm GalnNAs optically-pumped vertical cavity semiconductor optical amplifier[J]. Electronics Letters. , 2003,39(1): 100 - 102.
  • 8G P Agrawal,N K Dutta. Semiconductor lasers. [ M ]. 2nd ed. New York:Van Nostrand Reinhold, 1993.231 -258.

共引文献14

同被引文献19

  • 1邓果,潘炜,罗斌,严云富,李孝峰,赵峥.VCSOA中光双稳环宽控制的理论分析[J].激光技术,2005,29(1):74-76. 被引量:5
  • 2贾习坤,罗斌,潘炜,姚海峰,曹昌胜.传输矩阵法研究垂直腔半导体光放大器增益特性[J].激光技术,2005,29(4):377-379. 被引量:3
  • 3王刚,罗斌,潘炜,熊杰.A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers[J].Chinese Physics Letters,2005,22(10):2561-2564. 被引量:6
  • 4许江衡,罗斌,潘炜,贾习坤,汪帆.基于耦合腔的VCSOAs增益带宽优化[J].激光技术,2006,30(1):60-63. 被引量:5
  • 5KIMURA T, BJORLIN E S, CHOU H F et al. Optically preamplified receiver at 10,20 and 40Gbit/s using a 1550nm vertical-cavity SOA[ J ]. IEEE Photonics Technology Letters ,2005,17 ( 2 ) :456 - 458.
  • 6COLE G, BJORLIN E S, WANG C S et al. Widely tunable bottomemitting vertical-caviy SOAs [ J ]. IEEE Photonics Technology Letters,2005,17 (12) :2526 - 2528.
  • 7PIPREK J, BJORLIN E S, BOWERS J E. Design and analysis of vertical-cavity semiconductor optical amplifiers [ J ]. IEEE J Q E,2001,37(1) :127 -134.
  • 8LIM S F,CHANG-HASNAIN C J. A proposal of broad-bandwidth vertical-cavity laser amplifier [ J ]. IEEE Photonics Technology Letters,1995,7( 11 ) :1240 - 1242.
  • 9CORZINE S W, GEELS R S,SCOTT J W et al. Design of Fabry-Perot surface-emitting lasers with a periodic gain structure [J]. IEEE J Q E, 1989,25 (6) : 1513 - 1523.
  • 10TANG J F, ZHENG Q. Applied thin film optics [ M ]. Shanghai: Shanghai Scientific and Technical Publishers, 1984. 65 ( in Chinese ).

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部