期刊文献+

HgCdTe探测器的激光辐照响应特性研究 被引量:7

The Study on the Response Character of HgCdTe Detectors Under Laser Irradiation
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摘要 分别用波长为1.06μm、1.319μm、和3.8μm的连续波激光,对3个HgCdTe探测器进行了辐照实验;实验中发现了"振荡"、"零压输出"等一些新现象.综合报道了这些新的实验现象,并对其进行了分析解释和总结. In our experiment, three HgCdTe(PC,PV) detectors are irradiated by different CW laser beams whose wavelength is 1.06μm?1.319μm and 3.8μm respectively. Some new phenomena are found in the experiments, for example, 'Vibrating', 'Zero-output', etc. The new phenomena are wholly reported, and the measurement results have been analyzed and summarized.
出处 《装备指挥技术学院学报》 2004年第2期113-116,共4页 Journal of the Academy of Equipment Command & Technology
基金 国家高技术发展计划项目
关键词 激光 HGCDTE探测器 振荡现象 零压输出现象 辐照 响应特性 laser HgCdTe detector vibrating phenomenon zero-output phenomenon
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参考文献19

  • 1[1]Arora V K, Dawar A L. Effect of laser irradition on the responsivity of mercury cadmium telluride detectors[J]. Infra red physics&Technology, 1996, 37(2) :245-249.
  • 2[2]lax M. Temperature rise induced by laser beam[J]. J Appl Phys, 1977,48(9):3 919 3 924.
  • 3[3]Lax M. Temperature rise induced by laser beam II. The nonlinear case[J]. ApplPhys Lett,1978,33(8):786-788.
  • 4[4]Meyer J R, Bartoli F J, Kruer M R. Optical heating in semiconductors[J]. Phys Rev,1980,B21(4):1 559-1 568.
  • 5[5]Meyer J R, Kruer M R, Bartoli FJ. Optical heating in semi conductors: Laser damage in Ge, Si,InSb. and GaAs[J].J ApplPhys,1980,51(10):5 513-5 522.
  • 6[6]Yoffa E J. Dynamics of defense laser induced plasmas[J].Phys R ev, 1980, B21(6) :2 415-2 425.
  • 7[7]Yoffa E J. Role of carrier diffusion in lattice heating during pulsed laser annealing[J]. Appl Phy Lett,1980,36(1):37-38.
  • 8[8]Kim D M, Laser D L. Heating of semiconductors-effect of diffusion in nonlinear dynamic heat transport progress[J].J Appl Phys,1981,52(8):4 995-5 006.
  • 9[9]Kim D M, Kwong D L. Pulsed laser annealing of singlecrystal and ion-implanted semiconduetors[J]. IEEE J QE,1982,18(2) :224-232.
  • 10[10]Dawar A L, Savita Roy, Mall R P,et al. Effect of laser irradiation on structural, electrical, and optical properties of p-mercury cadmium telluride[J]. J Appl Phys,1991,70(7):3 516-3 520.

二级参考文献14

  • 1陈士华 陆君安.混沌动力学[M].武汉:武汉水利电力大学出版社,1999.359-362.
  • 2孙承伟 陆启生 范正修.激光辐照效应[M].北京:国防工业出版社,2002.336-381.
  • 3褚君浩 王戎兴 汤定元.非抛物型能带半导体Hg1—xCdxTe的本征载流子浓度[J].红外研究,1983,2(4):241-249.
  • 4Bartoli F. Irreversible laser damage in IR detector materials[J]. Appl Opt, 1977, 16(11):2934-2936.
  • 5Dawar A L, Savita Roy, Tirlok Nath, et al. Effect of laser annealing on electrical and optical properties n-mercury cadmium telluride[J]. J Appl Phys, 1991, 69(7):3849-3852.
  • 6Arora V K, Dawar A L. Effect of laser irradition on the responsivity of mercury cadmium telluride detectors[J]. Infrared Physics & Technology, 1996, 37:245-249.
  • 7Scott W. Electron mobility in Hg1-xCdxTe[J]. J Appl Phys, 1972, 43(3):1055-1062.
  • 8John F. Material processing-an overview[A]. Proceedings of the IEEE[C]. 1982, 70(6):533-544.
  • 9陆启生,蒋志平,刘泽金,舒柏宏.PC型HgCdTe探测器的记忆效应[J].红外与毫米波学报,1998,17(4):317-320. 被引量:14
  • 10许晓军,曾交龙,陆启生,舒柏宏,刘泽金.1.06μm激光对PC型HgCdTe探测器的破坏阈值研究[J].强激光与粒子束,1998,10(4):552-556. 被引量:15

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