摘要
本文使用TEM分析、X射线衍射以及电导和霍耳效应联合测量等手段研究了Ar^+激光结晶a-Si:H膜的结构和电学性质.结果表明a-Si:H液相激光结晶膜(LP-LCR)的平均晶粒尺寸达数十微米,呈<111>择优取向,室温电导率为1.5(Ω·cm)^(-1),电子霍耳迁移率达36cm^2V^(-1)s^(-1),是一种有应用前景的薄膜.
The structural and electrical properties of crystallized a-Si:H films obtained by Ar^+ la-ser scanning irradiation have been investigated by means of TEM, X-ray diffraction spectraand conductivity- Hall measurements.For the liquid phase laser crystallized films (LP-LCR),the results show that the average grain size is about tens of micrometers and the preferentialcrystal orientation is to the direction of <111>. At room temperature the conductivity of cry-tallized films is 1.5 (Ω·cm)^(-1) and the Hall mobility of electrons is about 36 cm^2V^(-1)S^(-1).The re-sults demonstrate that the LP-LCR films of a-Si:H are adequate for device application.
